Prof. Wang Hui-Qiong, Prof. Zheng Jin-Cheng & Team Publish in High Impact Journal


Research Management Centre congratulates Prof. Dr. Wang Hui-Qiong (Director of Research Management Center), Prof. Dr. Zheng Jin-Cheng (Director of Innovation Center) and their research team for the recent publication of "Determination of the embedded electronic states at nanoscale interface via surface-sensitive photoemission spectroscopy" in Light: Science and Application, a journal with a 2-year impact factor of 17.782 and a 5-year impact factor of 16.996.

Other members of the research team are Xu Jiayi (now working at PetroChina Kunlun Gas Co.,Ltd, China) and Lin Xiaoyuan (currently pursuing a master degree at the Department of Chemical Engineering and Applied Chemistry, University of Toronto). Both have graduated from XMUM School of Energy and Chemical Engineering in 2020. Prof. Kang Junyong and Dr. Li Yaping from the Department of Physics, Xiamen University also co-authored the paper.

As Professor Herbert Kroemer, the Nobel Prize winner in Physics in 2000, said in his award-winning speech: "The interface is the device." In the post-Moore era, microelectronic devices continue to develop towards integration, intelligence, digitization, and miniaturization. The integration of different electronic material films, especially the electronic state of the interface, has become the key to determining the device’s performance.

The interface between oxides usually includes atomic reconstruction, electronic state reconstruction, as well as the coupling of charge spin and orbit and other degrees of freedom. The new interface promotes new physical phenomena and unique physical connotation. However, the interface is often buried in the oxide materials and susceptible to the influence of neighboring bulk materials. Traditionally, it is believed that the photoelectron spectroscopy methods for characterizing surface electronic properties are not suitable to detect the electronic state structure of the buried interface due to the limitation of the electron mean free path. Therefore, the characterization method of the special electronic state of the interface region has always been a challenge in characterization science, and it is also a frontier research field of nanotechnology.

To this end, the research team systematically reviews the surface-sensitive technologies used in the study of buried interface states, including hard X-ray photoelectron spectroscopy (energy-mode), resonant soft X-ray angle-resolved photoelectron spectroscopy (angle-mode), and photoelectron spectroscopy methods that evolve with the thickness of the film (thickness-mode). Drawing on the team’s previous work, a quantitative modeling and analysis method combining in-situ growth and photoelectron spectroscopy characterization technology is described. Through quantitative modeling, it will help to distinguish the electronic state of the interface between functional materials.

The article is featured in one of the journal’s platforms


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